Infineon – Hi-Rel RadHard Power-MOS

Infineon’s new Hi-Rel RadHard Power MOSFET has the following features:

  • Low RDS(on)
  • Single Event Effect (SEE)
    • LET 90, Range: 122μm (Pb) LET 62, Range: 73μm (Xe)
    • VGS = -10V, VDS = 650V VGS = -15V, VDS = 650V
    • VGS = -12V, VDS = 350V VGS = -20V, VDS = 350V
  • Total Ionisation Dose (TID) 100 kRad (Level R)
  • Hermetically sealed
  • N-channel topology

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