Infineon – Hi-Rel RadHard Power-MOS
Infineon’s new Hi-Rel RadHard Power MOSFET has the following features:
- Low RDS(on)
- Single Event Effect (SEE)
- LET 90, Range: 122μm (Pb) LET 62, Range: 73μm (Xe)
- VGS = -10V, VDS = 650V VGS = -15V, VDS = 650V
- VGS = -12V, VDS = 350V VGS = -20V, VDS = 350V
- Total Ionisation Dose (TID) 100 kRad (Level R)
- Hermetically sealed
- N-channel topology