Micross – High-Performance Power Amplifier KCB810 Sets New Standards in Ultra-Wideband Technology (07/2024)

Micross Components recently announced the launch of the KCB810, a groundbreaking ultra-wideband power amplifier (PA) that stands out for its superior output power, low noise, high linearity, and impressive efficiency. With exceptional linearity and a typical 1-dB output compression point (OP1dB) of +30.2 dBm, the KCB810 is ideally suited for use in the driver stage of infrastructure transmitters.

The KCB810 employs hermetic surface-mount technology (SMT), specifically designed for defense and satellite technology applications. Additionally, the device can be delivered and tested according to the stringent requirements of Mil-PRF-38535 Class B and S, as well as the necessary QCI, underscoring its suitability for the most demanding applications.

Outstanding Features and Specifications
The KCB810 covers an impressive broadband frequency range from 400 to 2700 MHz and offers a low noise figure of just 3.8 dB. With an average OP1dB of +30.3 dBm and a high gain of 15 dB, the amplifier delivers consistent and reliable performance. The integrated on-chip bias circuit and operation with a single supply voltage enhance the user-friendliness and reliability of the device.

Versatile Applications
Thanks to its advanced technology and robust design, the KCB810 can be used in a wide range of applications. The main application areas include:

– Microwave radios
– Military radios
– Space missions
– VSAT systems
– Telecommunications infrastructure
– Test equipment

With the introduction of the KCB810, Micross strengthens its position as one of the leading providers of high-performance, reliable, and versatile electronic components. This new product offers engineers and developers the opportunity to optimize their systems with state-of-the-art technology while ensuring the highest standards of quality and performance.