International Rectifier – Radiation Hardened Power MOSFET Thru-Hole (Low-Ohmic TO-257AA) 60V, 30A, P-channel, R9 Superjunction Technology (04/2022)

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 91.3 MeV·cm2 /mg. Their combination of low RDS(on) and improved SOA allows for better performance in applications such as Latching Current Limiters (LCL) or Solid-State Power Controllers (SSPC). These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters


  • Single event effect (SEE) hardened (up to LET of 91.3 MeV·cm2 /mg)
  • Low RDS(on)
  • Improved SOA for linear mode operation
  • Improved avalanche energy
  • Simple drive requirements
  • Hermetically sealed
  • Electrically isolated
  • Ceramic eyelets
  • ESD rating: Class 2 per MIL-STD-750, Method 1020


  • Power distribution
  • Linear regulator
  • Latching current limiter
  • Load and protection switch