EPC Space – JANS MIL-PRF-19500 Certification for Rad-Hard GaN (02/2025)

  We are thrilled to announce that EPC Space has achieved the prestigious JANS MIL-PRF-19500 certification for its radiation-hardened GaN-on-Silicon transistors and ICs. Both EPC Space’s Andover, Massachusetts facility and its wafer fabrication facility in Taiwan have successfully met the rigorous standards set by the U.S. Department of Defense, reinforcing the company’s leadership in high-reliability semiconductor solutions for space applications.

A Landmark Achievement in Space-Grade Electronics

This milestone marks a world-first certification of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) under MIL-PRF-19500, a standard that defines the highest level of performance, durability, and environmental resilience for military and aerospace semiconductors.

Bel Lazar, CEO of EPC Space, stated:
“Securing the JANS certification is a direct result of our relentless pursuit of quality. Our teams have worked tirelessly to ensure our products not only meet but exceed the expectations for reliability in the most demanding conditions.”

Alex Lidow, CEO of EPC Corporation, added:
“Our commitment to the MIL-PRF-19500 standard not only guarantees the durability and performance of EPC Space’s products but also reinforces our dedication to supporting customers in achieving their critical objectives.”

Expanding the Portfolio – 18 New JANS Certified GaN HEMT Parts in 2025

Looking ahead, EPC Space is preparing to launch 18 new JANS-certified Rad-Hard GaN HEMT parts in 2025, covering a voltage range from 40V to 300V. This expansion further strengthens EPC Space’s position as a leading supplier of high-reliability electronics, ensuring superior efficiency and performance for space missions and other high-stakes applications.

 With this certification, EPC Space continues to push the boundaries of innovation, delivering best-in-class GaN solutions for the most demanding environments.