EPC Space Achieves GaN JANS MIL-PRF-19500 Certification (11/2025)

EPC Space, a leader in radiation-hardened (Rad Hard) GaN-on-silicon transistors and ICs, has achieved JANS MIL-PRF-19500 certification for both its Andover, Massachusetts facility and its wafer fabrication facility in Taiwan.

This certification marks an important milestone, demonstrating EPC Space’s commitment to delivering advanced semiconductor solutions that meet the highest standards of reliability, performance, and environmental resilience. The MIL-PRF-19500 certification, overseen by the U.S. Department of Defense, sets rigorous requirements for semiconductor components. EPC Space is the first company worldwide to achieve this certification for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT).

The achievement highlights the company’s dedication to exceeding industry expectations for quality and reliability in the most demanding environments. It also strengthens EPC Space’s role as a trusted partner in supporting critical space missions and other high-stakes applications.

In 2025, EPC Space will expand its portfolio with the launch of 18 JANS-certified Rad Hard GaN HEMT devices, covering a voltage range from 40V to 300V. This product expansion will further reinforce the company’s position as a key supplier of high-reliability electronics for space and defense applications.