Infineon – HiRel RadHard Power-MOSFETs

Infineon’s Radiation Hard Power-MOSFETs
have the following specifications:

 

BUY65CS08J-01

  • Low RDS(on)
  • Single Event Effect (SEE)

LET 62, Range: 73μm (Xe)               LET 90, Range: 122μm (Pb)

VGS = -15V, VDS = 650V                      VGS = -10V, VDS = 650V

VGS = -20V, VDS = 300V                      VGS = -12V, VDS = 300V

  • Total Ionisation Dose (TID): 100 kRad (Level R)
  • package SMD-0.5
  • Contiunous Drain Current ID = 8A at Tc = 25°C
  • Hermetically sealed
  • N-channel

 

BUY65CS28A-01

  • Low RDS(on)
  • Single Event Effect (SEE)

LET 62, Range: 73μm (Xe)               LET 90, Range: 122μm (Pb)

VGS = -15V, VDS = 650V                      VGS = -10V, VDS = 650V

VGS = -20V, VDS = 300V                      VGS = -12V, VDS = 300V

  • Total Ionisation Dose (TID): 100 kRad (Level R)
  • package SMD-2
  • Contiunous Drain Current ID = 28A at Tc = 25°C
  • Hermetically sealed
  • N-channel

 

Samples are available. Additionally, the Infineon qualified Flight devices are available.