Infineon – HiRel RadHard Power-MOSFETs
Infineon’s Radiation Hard Power-MOSFETs
have the following specifications:
BUY65CS08J-01
- Low RDS(on)
- Single Event Effect (SEE)
LET 62, Range: 73μm (Xe) LET 90, Range: 122μm (Pb)
VGS = -15V, VDS = 650V VGS = -10V, VDS = 650V
VGS = -20V, VDS = 300V VGS = -12V, VDS = 300V
- Total Ionisation Dose (TID): 100 kRad (Level R)
- package SMD-0.5
- Contiunous Drain Current ID = 8A at Tc = 25°C
- Hermetically sealed
- N-channel
BUY65CS28A-01
- Low RDS(on)
- Single Event Effect (SEE)
LET 62, Range: 73μm (Xe) LET 90, Range: 122μm (Pb)
VGS = -15V, VDS = 650V VGS = -10V, VDS = 650V
VGS = -20V, VDS = 300V VGS = -12V, VDS = 300V
- Total Ionisation Dose (TID): 100 kRad (Level R)
- package SMD-2
- Contiunous Drain Current ID = 28A at Tc = 25°C
- Hermetically sealed
- N-channel
Samples are available. Additionally, the Infineon qualified Flight devices are available.