International Rectifier – Radiation Hardened Field Effect Transistor for Space Applications with Quality Levels JANTXV and JANS

This specification is approved for use by all Departments and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500.

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.  Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device.  Provisions for radiation hardness assurance (RHA) to two radiation levels (“R” and “F”) are provided for JANTXV and JANS product assurance level.

The device package outlines are as follows:  TO-257AA (T3), a modified tab-less TO-257AA (D5) and a surface mount TO-276AA (U3, U3C) with or without ceramic lid.