IR – Release of new R9, 60V, RadHard MOSFET

IR releases new R9, 60V, RadHard MOSFET. TheLogo_IRF-HiRel_4C 60V, size 3 (n-channel) device is now available in an SMD-0.5 and TO-257AA (low ohmic).

IR HiRel R5 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of low RDS(on) and faster switching times reduces the power losses and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

Features (IRHYS9A7034CM (TO-257AA ) & IRHNJ9A7034 (SMD-0.5))

  • Low RDS(on)
  • Fast Switching
  • Single Event Effect (SEE) Hardened
  • Low Total Gate Charge
  • Simple Drive Requirements
  • Ease of Paralleling
  • Hermetically Sealed
  • Electrically Isolated
  • Ceramic package
  • Light Weight
  • Surface Mount
  • ESD Rating: Class 2 per MIL-STD-750, Method 1020