Infineon – Rad Tolerant N-CH MOSFETs (05/2024)

Engineered for Low Earth Orbit (LEO) applications and constellations, Infineon’s new radiation tolerant power products are ideal for missions with lifetimes between two and five years. The new product family include plastic encapsulated n-channel MOSFETs which are radiation tolerant by design. They are intended to support vital functions of a LEO satellite bus platform and payload operations. The radiation tolerant power FETs are based on Infineon’s enhanced CoolMOS™ technology, qualified according to AEC-Q100 and using mature high volume production process. The products are available in SMD or through hole package types.

Key features:

• Plastic encapsulated packaging
• AEC-Q101 qualified
• Total dose 30 kRads(Si)
• SEE hardened up to 46 MeV∙cm2/mg
• No wafer lot or component traceability

Target applications:

• Power conditioning unit
• Power distribution unit
• DC-DC converters

150V Radiation Tolerant power MOSFETs

• BUP15CN060L-01   Package: D2PAK (TO263)
• BUP15CN027E-01   Package: TO-247

60V Radiation Tolerant power MOSFETs

• BUP06CN035L-01   Package: D2PAK (TO263)
• BUP06CN015E-01   Package: TO-247